Characterization and SPICE Modeling of Lateral Diffused MOS by using a Novel Metal Contact Structure
碩士 === 國立交通大學 === 電子工程系所 === 96 === Self-heating induced internal voltage degradation is observed. A novel lateral diffused MOS transistor with an additional metal contact for internal voltage measurement is introduced. An internal voltage transient at high gate voltage pulse is measured. A comparis...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84751848393177834225 |