Characterization and SPICE Modeling of Lateral Diffused MOS by using a Novel Metal Contact Structure

• Main Authors: Hsu-Ting Shiung, 熊勖廷
• Other Authors: Tahui Wang
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/84751848393177834225

碩士 === 國立交通大學 === 電子工程系所 === 96 === Self-heating induced internal voltage degradation is observed. A novel lateral diffused MOS transistor with an additional metal contact for internal voltage measurement is introduced. An internal voltage transient at high gate voltage pulse is measured. A comparison of self-heating characterization by the internal voltage method and the conventional drain current method is presented. The internal voltage method is demonstrated to be more sensitive than drain current method for self-heating characterization. A two-component VI-based LDMOS SPICE model including self-heating effect is proposed. Our model accurately depicts the LDMOS drain current transient at high gate voltage pulse, demonstrating successful use of the self-heating model. Modeling results of the self-heating and non-self-heating currents at various VG and VD are also shown.