The Research of Electrical Characteristics of High-k Dielectric -Semiconductor Field-Effect Transistor
碩士 === 國立交通大學 === 電子工程系所 === 96 === As the very large scale integration (VLSI) technology continues to be scaled down, the thickness of gate dielectric has to be decreased for maintaining the capacitance value and drive levels. The gate leakage current increases with decreasing thickness, and the ph...
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| Format: | Others |
| Language: | en_US |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15024662009840774454 |