A Low Threshold Voltage n-MOSFET Using Fully Silicided Gate and High-κ Dielectric
碩士 === 國立交通大學 === 電子工程系所 === 96 === Metal-gate/high-κ is required for 45 node CMOS technology to reduce the intolerable leakage current of the conventional SiO2-based CMOSFETs. The desirable effective work function of metal gate should be close to conduction band edge of Si (~4 eV) for nMOSFETs. How...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67014896546812269266 |