Gate Engineering of Advanced MOSFETs for Device Performance and Reliability Improvement

博士 === 國立交通大學 === 電子工程系所 === 96 === In this dissertation, we investigated the gate engineering integration for advanced device performance and reliability improvement including the comparison of STI-induced local uniaxial compressive stress in <110>- and <100>-channel directions, the use...

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Bibliographic Details
Main Authors: Wen-Cheng Lo, 羅文政
Other Authors: Chun-Yen Chang
Format: Others
Language:en_US
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/05842626356346191231