Enhancement of Metal-induced Lateral Crystallization Growth Rate by Rapid Thermal Annealing

• Main Authors: Szu-Hsing Chung, 鍾思行
• Other Authors: YewChung Sermon Wu
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/14096293610098534671

碩士 === 國立交通大學 === 材料科學與工程系所 === 96 === Two annealing methods of fabricating low temperature poly Silicon(LTPS) thin film transistor (TFT) were discussed in this study.In order to achieve the low temperature process, we used metal-induced lateral crystallization(MILC) to fabricate it . Ni can lower the temperature of process and annealing time because the reaction between Ni and Si of forming Nickel Disilicide(NiSi2) which lowers the annealing time in further process.In this experiment, the annealing were most achieved in rapid thermal annealing chamber(RTA), and several parameters were designed to change. The other annealing method is furnace annealing(FA). The samples fabricated by those ways would be compared in this research.