Study on Characteristic and Fabrication of Aluminum Nitride MIS
碩士 === 國立交通大學 === 工學院碩士在職專班精密與自動化工程組 === 96 === As the feature size of silicon-based devices shrinks below 0.18 μm, the need for new electronic materials becomes readily apparent. Aluminum nitride is an attractive material for this purpose due to its significantly higher dielectric constant and its...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63571908512588517151 |