Study on the Effects of Device Structures and Processes on the Reliability Issues of a-Si:H TFTs
碩士 === 國立交通大學 === 電機學院碩士在職專班電子與光電組 === 96 === In this thesis, the instability issues of a-Si:H TFTs with various device structures and processes after prolonged different gate and drain bias stresses were investigated. It was found that the threshold-voltage shift results from the charge trapping an...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02962980429776124026 |