Nonvolatile memory with gate of self-assembled nanostructures of silicon quantum-dots in mesoporos silica

碩士 === 國立交通大學 === 光電工程系所 === 96 === In this thesis, a new class of artificially engineered ferroelectric-like materials synthesized by embedding three-dimensional arrays of Si nanocrystals in mesoporous silica matrix was reported. We attribute the measured polarization switching to polar layers lyin...

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Main Authors: Jian-Da Huang, 黃建達
Other Authors: Hao-Chung Kuo
Format: Others
Language:en_US
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/20769402143275645892
id ndltd-TW-096NCTU5124061
record_format oai_dc
spelling ndltd-TW-096NCTU51240612015-10-13T12:18:06Z http://ndltd.ncl.edu.tw/handle/20769402143275645892 Nonvolatile memory with gate of self-assembled nanostructures of silicon quantum-dots in mesoporos silica 含自組裝矽量子點之奈米孔洞氧化矽複合材料閘極之非揮發記憶體 Jian-Da Huang 黃建達 碩士 國立交通大學 光電工程系所 96 In this thesis, a new class of artificially engineered ferroelectric-like materials synthesized by embedding three-dimensional arrays of Si nanocrystals in mesoporous silica matrix was reported. We attribute the measured polarization switching to polar layers lying at the interfaces between one-side bonded Si nanocrystals and mesoporous silica matrix. A metal-oxide-semiconductor field-effect transistor with the ferroelectric-like material in place of the gate dielectrics was fabricated to demonstrate its high potential for the silicon-based nonvolatile random-access memories. Hao-Chung Kuo Tien-Chang Lu 郭浩中 盧廷昌 2008 學位論文 ; thesis 45 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 碩士 === 國立交通大學 === 光電工程系所 === 96 === In this thesis, a new class of artificially engineered ferroelectric-like materials synthesized by embedding three-dimensional arrays of Si nanocrystals in mesoporous silica matrix was reported. We attribute the measured polarization switching to polar layers lying at the interfaces between one-side bonded Si nanocrystals and mesoporous silica matrix. A metal-oxide-semiconductor field-effect transistor with the ferroelectric-like material in place of the gate dielectrics was fabricated to demonstrate its high potential for the silicon-based nonvolatile random-access memories.
author2 Hao-Chung Kuo
author_facet Hao-Chung Kuo
Jian-Da Huang
黃建達
author Jian-Da Huang
黃建達
spellingShingle Jian-Da Huang
黃建達
Nonvolatile memory with gate of self-assembled nanostructures of silicon quantum-dots in mesoporos silica
author_sort Jian-Da Huang
title Nonvolatile memory with gate of self-assembled nanostructures of silicon quantum-dots in mesoporos silica
title_short Nonvolatile memory with gate of self-assembled nanostructures of silicon quantum-dots in mesoporos silica
title_full Nonvolatile memory with gate of self-assembled nanostructures of silicon quantum-dots in mesoporos silica
title_fullStr Nonvolatile memory with gate of self-assembled nanostructures of silicon quantum-dots in mesoporos silica
title_full_unstemmed Nonvolatile memory with gate of self-assembled nanostructures of silicon quantum-dots in mesoporos silica
title_sort nonvolatile memory with gate of self-assembled nanostructures of silicon quantum-dots in mesoporos silica
publishDate 2008
url http://ndltd.ncl.edu.tw/handle/20769402143275645892
work_keys_str_mv AT jiandahuang nonvolatilememorywithgateofselfassemblednanostructuresofsiliconquantumdotsinmesoporossilica
AT huángjiàndá nonvolatilememorywithgateofselfassemblednanostructuresofsiliconquantumdotsinmesoporossilica
AT jiandahuang hánzìzǔzhuāngxìliàngzidiǎnzhīnàimǐkǒngdòngyǎnghuàxìfùhécáiliàozhájízhīfēihuīfājìyìtǐ
AT huángjiàndá hánzìzǔzhuāngxìliàngzidiǎnzhīnàimǐkǒngdòngyǎnghuàxìfùhécáiliàozhájízhīfēihuīfājìyìtǐ
_version_ 1716857782482763776