Nonvolatile memory with gate of self-assembled nanostructures of silicon quantum-dots in mesoporos silica
碩士 === 國立交通大學 === 光電工程系所 === 96 === In this thesis, a new class of artificially engineered ferroelectric-like materials synthesized by embedding three-dimensional arrays of Si nanocrystals in mesoporous silica matrix was reported. We attribute the measured polarization switching to polar layers lyin...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20769402143275645892 |
| Summary: | 碩士 === 國立交通大學 === 光電工程系所 === 96 === In this thesis, a new class of artificially engineered ferroelectric-like materials synthesized by embedding three-dimensional arrays of Si nanocrystals in mesoporous silica matrix was reported. We attribute the measured polarization switching to polar layers lying at the interfaces between one-side bonded Si nanocrystals and mesoporous silica matrix. A metal-oxide-semiconductor field-effect transistor with the ferroelectric-like material in place of the gate dielectrics was fabricated to demonstrate its high potential for the silicon-based nonvolatile random-access memories.
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