Photovoltaics and photodetectors with silicon quantum-dot superlattice structures

• Main Authors: Shia-Chia Liu, 劉士嘉
• Other Authors: Hao-Chung Kuo
• Format: Others
• Language: en_US
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/98678279129766493018

碩士 === 國立交通大學 === 光電工程系所 === 96 === We reported enhanced spectral photoresponse from a two-terminal metal-oxide-silicon (MOS) type detector with a capping layer of Si-QDs embedded MS and the enhancement is attributed to transistor-like operation of the device, in which the inversion layer acts as the emitter while trapping of positive charges in the mesoporous dielectric layer assists the carrier injection from the inversion layer to the contact, resulting in current amplification. The photo state of Si-O nanostructures in transistors dominates threshold voltage and, therefore, large drain currents. Hence, a three-terminal photo-metal-oxide-silicon field-effect transistor (MOSFET) with a Si-O nanostructured gate dielectric will be developed to enhance photoresponse. Mesoporus silica (MS) dielectrics revealed low dielectric constant, the porosity in such materials was also responsible for refractive index as low as 1.25, integrated together with Si3N4 layers to be double-layer-based graded-refractive-index ant-reflectors for silicon solar-cells. Enhanced solar-light transmission increased conversion efficiency of Si solar panels by 4%. We will also introduction of Si-QDs embedded MS in PV cells can provide wavelength down conversion, and direct charge separation to produce an enhanced photovoltaic. ii