Photovoltaics and photodetectors with silicon quantum-dot superlattice structures
碩士 === 國立交通大學 === 光電工程系所 === 96 === We reported enhanced spectral photoresponse from a two-terminal metal-oxide-silicon (MOS) type detector with a capping layer of Si-QDs embedded MS and the enhancement is attributed to transistor-like operation of the device, in which the inversion layer acts as th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98678279129766493018 |