A Study of Surface Capacitance Devices
碩士 === 國立交通大學 === 電機學院碩士在職專班電子與光電組 === 96 === The thesis is discussing the characteristic of the surface capacitive sensor and confirms the surface capacitance with simulation. The capacitance device in the past is composed of two parallel plates some dielectric in the between. But the surf capacita...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38166097863932855431 |
| Summary: | 碩士 === 國立交通大學 === 電機學院碩士在職專班電子與光電組 === 96 === The thesis is discussing the characteristic of the surface capacitive sensor and confirms the surface capacitance with simulation. The capacitance device in the past is composed of two parallel plates some dielectric in the between. But the surf capacitance device have different shape which made by PCB layout or MEMS process and it can judge the position that the capacitance to environment relative position by the variations in output voltage from the interface circuit of the capacitive sensor
The interface circuit of the capacitive sensor is composed a clock switch and its different from the capacitance device which transmitted must modulation and received must demodulation. To realize IC design on the premise that reduces the electrical energy consumption. The interface circuit of the capacititive sensor uses electronic circuit board and was confirmed to IC simulation.
It is fabricated in TSMC 0.35μm 2P4M CMOS technology process. The capacitor range is 8~13pf which correspond to frequency from 0.5k~500 kHz. The power supply is 3.3 V. The simulation tool is Agilent ADS program simulation. The capacitance device size is 10mm X 64.5mm.
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