| Summary: | 碩士 === 國立成功大學 === 光電科學與工程研究所 === 96 === The Aluminum-doped zinc oxide (ZnO:Al, AZO) thin films were deposited on soft polymer substrates with a RF magnetron co-sputtering method. In this research, we divide them into three parts to study. The First part: AZO thin films were deposited on PC substrates at room temperature, and the Al content was controlled by varying Al RF power (PAl=0~35 W), we investigated the influence of Al contents on the structure, composition, electrical and optical properties of AZO films. The second part: same as the previous part we investigated the physical properties of AZO thin films deposited in different Al content, however, with PC substrates measured in 200 ℃. The third part: we chose PI and PET as the soft substrates, and investigated substrates influence on physical properties of AZO thin films.
The AZO films then were used for the anode contact of PLED devices. The PLED devices structure consisted of a hole transport layer (HTL) was PEDOT:PSS, an emitting layer (EML) was PF. The cathode contact deposited on top of the EML was a bi-layer consisting of Ca and Al layer. The electro-luminescence performances of the devices were studied.
The AZO thin film, which was prepared at room temperature at PAl= 25 W, present the lowest resistivity (ρ=7.75×10-4 Ω-cm) and high transmittance (89 %). The performance of PLED had the best rectification ratio was 410.3 in this series. We also obtained the AZO thin film which has low resistivity (ρ=7.63×10-4 Ω-cm) and high transmittance (91 %) by heating the substrate temperature to 200 ℃ at PAl= 25 W. The performance of PLED has the largest brightness of 4143 cd/m2 at 10.7 V. Finally, the physical properties of the AZO thin films won’t be changed by the difference of the soft substrates.
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