| Summary: | 碩士 === 國立成功大學 === 機械工程學系碩博士班 === 96 === The goal of this thesis is aimed at the investigation upon the kinematic characteristics of the charge carriers within the silicon-based transistor under nano-scale effects, via classical transport model to include a quantum correction term so that the difference between quantum transport model and classical transport model can be unveiled. Based on the computer simulation of the commercial software nanoMOS, the impacts on nanowire field effect transistors due to various design of crystal structure and choice of doped material composition are analyzed. Conductance performance such as the sub-threshold swing and the threshold voltage are studied. Furthermore, this thesis utilizes software package VASP (Vienna ab initio Simulation Package) to simulate the behavior of the silicon-based nanowires by varying nanowires geometric cross-section and replacement of the silicon atoms in crystal by other elements, such that the induced distribution of the electron density of state of the nanowires owing to change of the crystal structure can be obtained. The simulation results provide essential basis for nanowires field effect transistor in structural design and potential choice of the device material for future developments. Finally, this thesis proposes a simple and easily realizable fabrication technique, sidewall spacer formation, for implementation of silicon nanowires.
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