Characterization of ALD Hf-Silicate Gate Dielectrics CMOS Devices Using Charge Pumping Technology
碩士 === 國立成功大學 === 電機工程學系碩博士班 === 96 === The aggressive CMOS device scaling has been reaching the physical limit of conventional SiO2 MOSFETs. When the dielectric thickness less than 20Å, the directly tunneling will induce higher leakage current. It is important to find a gate dielectric which could...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71011056572075098053 |