| Summary: | 碩士 === 國立成功大學 === 電機工程學系碩博士班 === 96 === Rare earth-activated YVO4 phosphors have been attracting more attention in recent years because of their high luminescent intensities and stability under UV or UVU excitation as comparison with the conventional phosphors. Thus, rare earth-activated YVO4 phosphors have been considered as one possible luminescent material for flat display devices, such as plasma display panel (PDP) and field emission displays (FED).
In this thesis, we have employed solid state reaction method and successfully prepared Tm- and Dy-codoped YVO4 with high luminance of white light emission. The relationship between the ratio of Tm3+/Dy3+ and the chromaticity is also studied. The best white-light emission was observed with YVO4：0.01mol(Tm0.2Dy0.8). Since the energy is efficiently transferred from VO43- to the two dopants Tm3+ and Dy3+, YVO4：0.01mol(Tm0.2Dy0.8) exhibits a strong white light emission.
Additionally, we have investigated the morphological crystal structure and luminescent properties of YVO4：0.01mol(Tm0.2Dy0.8) thin film phosphors deposited by RF magnetron sputtering deposition. In particular, the effects of pressure, power and annealing temperature on luminescent properties of YVO4：0.01mol(Tm0.2Dy0.8) thin film phosphors have been examined. We concluded that the best white-light emission is achieved under the following conditions： pure Ar atmosphere, pressure of 5mtorr, RF power of 200W, substrate temperature of 350℃ and annealing temperature of 800℃.
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