The study of reproducible bipolar resistive switch of TiO2 nanolayer prepared by thermal oxidized TiN thin films

• Main Authors: Tzu-Lien Chang, 張子廉
• Other Authors: Shoou-Jinn Chang
• Format: Others
• Language: en_US
• Online Access: http://ndltd.ncl.edu.tw/handle/60413009195893830277

碩士 === 國立成功大學 === 電機工程學系碩博士班 === 96 === The requirement of storage device not only the propose to store data. These kind of devices are going to handle huge amounts of digital data. Therefore, The non-volatile memories requirement of the development that have high speed, high density, low power consumption, high endurance, and low price. The non-volatile memory was focused on flash memory and hard disk. But the fabrication and the machinery is complex. One of the candidates of next generation advanced non-volatile memory that can replace flash memory is resistive random access memory. The simple structure consists of two terminal electrodes that sandwich a material normally resistive to change. In other words, the resistive of single layer thin films can switch to different stable state by applying negative or positive bias voltage. It advantage is non- volatile, high on /off ratio, easy to fabricate, and compatible with the CMOS fabrication. The resistive switching thin film which make correct patterns and allocate electrode can even be a basic logic gate. In the early stage the that was study widely. The Solid electrolyte, the first generation resistive switching films response and the alternative application of resistive switching thin films. That will be present latter. Some transition metal oxide can be observe the resistive switching behavior. But the mechanism is not be announce in unanimity. In this thesis, the TiN thin film was prepared by RF magnetron sputtering system. Obtaining the high quality TiO2 nanolayer by thermal oxidation and anodic oxidation. Then the Pt/ TiN/TiO2/Ir sandwich structure device was made. And measurement the electrical property. The goal in this thes is evaluating which recipe will be most suitable, and to observe the resistive switching behavior on the TiO2 thin film.