Investigation of GaN-based UV PDs and MOSHFETs Fabricated with a Low Temperature GaN Interlayer
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === The main goal of this research is the fabrication and characterization of GaN-based ultraviolet (UV) photodetectors (PDs) and metal-oxide-semiconductor heterostructure field effect transistors (MOSHFETs) with a low temperature (LT) GaN interlayer. AlGaN/GaN...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15669667155131681115 |