Investigation of Silicon–Germanium Metal-Oxide Semiconductor Field-Effect Transistors by Plasma-enhanced Chemical Vapor Deposition Using Laser Assistance
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === Silicon-germanium (SiGe) alloy is a popular material in applications of high speed devices and optoelectronic devices recently due to its tunable bandgap and compatibility with integrated circuits. However, the deposited SiGe films usually has to be deposite...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58021009956460785732 |