Investigation of three-dimension lithography using a laser direct writing technique

碩士 === 國立中興大學 === 精密工程學系所 === 96 === For a conventional photolithography technique, two-dimensional or three-dimensional patterns always need single or multiple masks to make repetitive exposure processes. Once the masks are contaminated by residual photoresist (PR) or particle defects, the photolit...

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Bibliographic Details
Main Authors: Neng-Tsung Pai, 白能宗
Other Authors: 武東星
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/33774043279160500059
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Summary:碩士 === 國立中興大學 === 精密工程學系所 === 96 === For a conventional photolithography technique, two-dimensional or three-dimensional patterns always need single or multiple masks to make repetitive exposure processes. Once the masks are contaminated by residual photoresist (PR) or particle defects, the photolithography performance will be easily degraded. In this thesis, the gray-level laser-direct write system was used to make three-dimensional micro components, where the lithography process was designed using an AutoCAD software. Then the pattern software was transformed by the machine code using the DWL66 transform program. During the experiments, the gray level can be controlled by the filtered laser power, photosensitive and development time. After the development and hard bake process, the two dimensional photoresist pattern can be measured using scanning electron microscopy and surface profilometry. The measure results demonstrate that similar microlens and other shapes can be fabricated by controlling the gray level and pattern design. In our direct-write process, the circular and ring patterns were designed to make three-dimension lithography with the 4 mm lens and 10% filter. The PR thickness (AZ 5214E) can be controlled to 2μm under a two-step spin process (1000rpm@10 sec and 2000rpm@25sec). The pre-bake condition was 90℃ for 8min and the best development time was 30 sec. After the exposure process, a post-bake condition of 120℃, 30min was used. Finally, we have successfully performed the two- and three-dimensional lithography without using any conventional photomask.