Effects of illumination on the low-frequency noise behavior of GaN nanowire devices
碩士 === 國立中興大學 === 物理學系所 === 96 === We study the excess noise of GaN nanowire devices, also the influence of illumination .The correlation technique is used to measure small electric noise and to separate the noise from the semiconductor nano wire and the contacts. When the contact resistance is s...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83820783129049238730 |
| Summary: | 碩士 === 國立中興大學 === 物理學系所 === 96 === We study the excess noise of GaN nanowire devices, also the influence of illumination .The correlation technique is used to measure small electric noise and to separate the noise from the semiconductor nano wire and the contacts. When the contact resistance is smaller than the wire resistance, we find that the nanowire also exhibits the Lorentzian noise for bias current larger than 8nA. To investigate the influence of illumination, We focus a green light on the two-wire nanowire device by a confocal microscope. We find that the characteristic time of the Lorentzian noise depends on the laser power. When the intensity of the laser light is higher, the characteristic time tends to be shorter.
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