Fabrication and optical properties of iron silicide nanostructures
碩士 === 國立中興大學 === 材料科學與工程學系 === 96 === Semiconducting β-FeSi2 has attracted great attention in the recent decade because it has a direct band-gap of about 0.8 eV, and it can emit a light of 1.54 μm. With this property, silicon based IR-LED (Light emitting device) and IR-Sensor can be synthesized. In...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24863160343432468951 |