Fabrication of the InGaN micro-square array Light-Emitting Diodes by filling with Ga2O3 buried layer
碩士 === 國立中興大學 === 材料科學與工程學系 === 96 === In this thesis, we demonstrated that the GaN-based multi-quantum-well (MQW) micro-square arrays light emitting diodes were filled with the Ga2O3 buried layer for the isolation of individual micro-square array. The Ga2O3 layers were formed at the GaN:Si n-type m...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/08256260922392119729 |