Fabrication of post plasma treated aluminum doped zinc oxide thin films for solar cell applications
碩士 === 國立中興大學 === 光電工程研究所 === 96 === The experiment can be divided into two sections: AZO films are prepared by r.f. magnetron sputtering system and PECVD follows up a post plasma treatment on the pre-sputtering films. The related influences of substrate temperature, working pressure and different H...
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ndltd-TW-096NCHU51240062016-05-09T04:13:52Z http://ndltd.ncl.edu.tw/handle/30749297180337715037 Fabrication of post plasma treated aluminum doped zinc oxide thin films for solar cell applications 應用於太陽能電池之電漿後處理氧化鋅掺鋁薄膜之研製 Ying-Ching Chen 陳穎慶 碩士 國立中興大學 光電工程研究所 96 The experiment can be divided into two sections: AZO films are prepared by r.f. magnetron sputtering system and PECVD follows up a post plasma treatment on the pre-sputtering films. The related influences of substrate temperature, working pressure and different H2 + Ar ambient are investigated during r.f. magnetron sputtering deposition of AZO films. At pre-sputtering process, the temperature is always kept at the range 200C expect for the coefficient is temperature (RT~300C).Besides, the working pressure except for the variation is pressure(1E-1Torr~1E-2Torr).always is maintained at the 5E-2Torr.The chamber is always preserved under 30 sccm Ar flow rate except for the different H2 gas flow ratio (2%~11.76%). Post gas plasma treatments follow up the different pre-sputtering AZO films by PECVD. Amphoteric H2 plasma is firstly induced to investigate if the saturation tendency occurs during different treated times (0~120 min.). Different gas plasma such as CH4, NH3, Ar and CF4 carry on the experiment at the critical saturation condition (60min.). The structural, electrical and optical characteristics will be studied and compared in order to investigate the influences of the gas plasma on AZO films. In the recent years, the flexible substrates have been applied for many optoelectronic devices, but are limited by the poor sustaining in high temperature. Many studies on the post treatment on AZO films have been investigated, however a high temperature is needed to anneal. Post plasma treatment for increasing the electrical and optical properties has been investigated. Here provides a low temperature procedure of post plasma treatment and produces atomic plasma in a different way. This method can have a major effect on widening the applications of the flexible substrate. Fang-Hsing Wang 汪芳興 學位論文 ; thesis 103 zh-TW |
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碩士 === 國立中興大學 === 光電工程研究所 === 96 === The experiment can be divided into two sections: AZO films are prepared by r.f. magnetron sputtering system and PECVD follows up a post plasma treatment on the pre-sputtering films.
The related influences of substrate temperature, working pressure and different H2 + Ar ambient are investigated during r.f. magnetron sputtering deposition of AZO films. At pre-sputtering process, the temperature is always kept at the range 200C expect for the coefficient is temperature (RT~300C).Besides, the working pressure except for the variation is pressure(1E-1Torr~1E-2Torr).always is maintained at the 5E-2Torr.The chamber is always preserved under 30 sccm Ar flow rate except for the different H2 gas flow ratio (2%~11.76%).
Post gas plasma treatments follow up the different pre-sputtering AZO films by PECVD. Amphoteric H2 plasma is firstly induced to investigate if the saturation tendency occurs during different treated times (0~120 min.). Different gas plasma such as CH4, NH3, Ar and CF4 carry on the experiment at the critical saturation condition (60min.). The structural, electrical and optical characteristics will be studied and compared in order to investigate the influences of the gas plasma on AZO films.
In the recent years, the flexible substrates have been applied for many optoelectronic devices, but are limited by the poor sustaining in high temperature. Many studies on the post treatment on AZO films have been investigated, however a high temperature is needed to anneal. Post plasma treatment for increasing the electrical and optical properties has been investigated. Here provides a low temperature procedure of post plasma treatment and produces atomic plasma in a different way. This method can have a major effect on widening the applications of the flexible substrate.
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author2 |
Fang-Hsing Wang |
author_facet |
Fang-Hsing Wang Ying-Ching Chen 陳穎慶 |
author |
Ying-Ching Chen 陳穎慶 |
spellingShingle |
Ying-Ching Chen 陳穎慶 Fabrication of post plasma treated aluminum doped zinc oxide thin films for solar cell applications |
author_sort |
Ying-Ching Chen |
title |
Fabrication of post plasma treated aluminum doped zinc oxide thin films for solar cell applications |
title_short |
Fabrication of post plasma treated aluminum doped zinc oxide thin films for solar cell applications |
title_full |
Fabrication of post plasma treated aluminum doped zinc oxide thin films for solar cell applications |
title_fullStr |
Fabrication of post plasma treated aluminum doped zinc oxide thin films for solar cell applications |
title_full_unstemmed |
Fabrication of post plasma treated aluminum doped zinc oxide thin films for solar cell applications |
title_sort |
fabrication of post plasma treated aluminum doped zinc oxide thin films for solar cell applications |
url |
http://ndltd.ncl.edu.tw/handle/30749297180337715037 |
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