Formation of nanostructure by self-assembled PS-b-PMMA block copolymer method for silicon nanowire solar cell applications

碩士 === 國立中興大學 === 光電工程研究所 === 96 === In this thesis, we discuss the method for optimizing the block copolymer thin film. Then, we achieve nanolithography by using the copolymer thin film on silicon wafer. Finally, we fabricate Cr and Al nanodot array on Si wafer. Our experiment result show that: in...

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Bibliographic Details
Main Authors: Ming-Wei Ho, 何明韋
Other Authors: Shu-Tong Chang
Format: Others
Language:zh-TW
Online Access:http://ndltd.ncl.edu.tw/handle/63231412698157376885
Description
Summary:碩士 === 國立中興大學 === 光電工程研究所 === 96 === In this thesis, we discuss the method for optimizing the block copolymer thin film. Then, we achieve nanolithography by using the copolymer thin film on silicon wafer. Finally, we fabricate Cr and Al nanodot array on Si wafer. Our experiment result show that: in proper film thickness, heating temperature and heating time, we can optimize the PS-b-PMMA nanoporous. After oxygen plasma treatment, a very thin film of metal mask was deposited on PS-b-PMMA nanoporous by thermal evaporation system. After pattern transfer, we have the Cr nanodot array as etch mask. If we heat in acetic acid rinsing process, the PS-b-PMMA nanoporous form spherical structure with unknown material. After several repeat experiments, we found that the PS-b-PMMA thin film will split into chain and finally become spherical structure by increasing heating time.