High quality ZnO films prepared by ALD at low temperatures using DEZn and nitrous oxide
碩士 === 國立中興大學 === 光電工程研究所 === 96 === In this thesis , low temperature (LT) zinc oxide (ZnO) films were prepared on c – plane sapphire substrates to explore the effect of buffer – layer annealing on the characteristic of the films . Atomic layer deposition (ALD) was employed to grow ZnO films using d...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34238633876486555506 |
| Summary: | 碩士 === 國立中興大學 === 光電工程研究所 === 96 === In this thesis , low temperature (LT) zinc oxide (ZnO) films were prepared on c – plane sapphire substrates to explore the effect of buffer – layer annealing on the characteristic of the films . Atomic layer deposition (ALD) was employed to grow ZnO films using diethylzinc (DEZn) and nitrous oxide (N2O) . It was found that a LT – ZnO buffer layer having certein thickness annealed at an elevated temperature was beneficial to enable the realization of the high quality LT – ZnO films deposited subsequently . A self – limiting process window was observed in a range of DEZn admittance from 5.7 to 8.7 μmole/min . ZnO films grown at the self – limiting regime all show very good thickness uniformity . The monolayer – by – monolayer deposition nature along with buffer – layer annealing treatment allow to improve the structural , optical and electrical characteristics of the ALD – grown LT – ZnO films , post – annealing treatment under nitrogen (N2) ambient was also found to help achieving good properties of the ZnO films .
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