| Summary: | 碩士 === 明新科技大學 === 電子工程研究所 === 96 === In this thesis, a study of a multiple band low noise amplifier with a RF (Radio Frequency) CMOS active inductor using TSMC 0.18 μm CMOS process is presented. Using an improved high-Q active inductor including two bits binary controlled code, the multi-band low noise amplifier operating at four different frequency bands is realized.
In this CMOS active inductor design, a feedback resistor is used to decrease the loss of the active inductor. Hence, the high Q active inductor can be obtained. The proposed amplifier is designed in TSMC 0.18-um CMOS technology. Based on the simulation results, the amplifier can operate at 900MHz, 1.8GHz, 1.9GHz, and 2.4GHz with forward gain (S21) of 40.7dB, 35.9dB, 37.2dB, and 30.7dB, and the noise figure (NF) of 0.018dB, 0.006dB, 0.001dB, and 0.01dB, respectively. Furthermore, the power dissipation of this amplifier can retain constant at all operating frequency bands and consume around 10.53 mW from 1.8V power supply. The dimension of this circuit occupies 880×700 μm2.
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