The Investigations of Electrical Characteristic on nMOSFETs with High-k Dielectrics in Nano Technology
碩士 === 明新科技大學 === 電子工程研究所 === 96 === To this day, the device dielectric thickness scaling down to 1.1 nm, and channel length will down to 18 nm in 2010 year by 2007 ITRS roadmap; thus leakage current of gate and the power dissipation starts hurriedly to increase, causes the transistor the operating...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22034360080688440699 |