The Investigations of Electrical Characteristic on nMOSFETs with High-k Dielectrics in Nano Technology

• Main Authors: Hou-Jhih Huang, 黃厚智
• Other Authors: Chii-Wen Chen
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/22034360080688440699

碩士 === 明新科技大學 === 電子工程研究所 === 96 === To this day, the device dielectric thickness scaling down to 1.1 nm, and channel length will down to 18 nm in 2010 year by 2007 ITRS roadmap; thus leakage current of gate and the power dissipation starts hurriedly to increase, causes the transistor the operating temperature to be more and more high. In order to solve leakage current, a high-k material was used to replace silicon dioxide for direct-tunneling effect suppressing. In this thesis, we investigated electrical characteristic and leakage current induced device’s degradation on different gate structures for nMOSFET integrated with high-k dielectric material. By testing the threshold voltage and analyzing in electrical metrology, one can figure out what the thickness or the quality of the gate oxide is during oxide growth. We identify nMOSFET with poly-Si gate possess less gate leakage current than device with metal gate. And nMOSFET with HfO2 gate dielectric possess less gate leakage than device with HfSiON gate dielectric. And thick HfSiON gate dielectric has better electrical characteristics than thin gate dielectric.