Study of Aluminum oxide for anti-voltage resistance

• Main Authors: LAO,WEI LI, 勞煒立
• Other Authors: BAI ALLEN
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/20574250130847922871

碩士 === 高苑科技大學 === 高分子環保材料研究所 === 96 === Anodizing oxidation method was employed to treat aluminum substrate in order to get an insulating surface by form a layer of aluminum oxide (A12O3) film under the oxidation condition of using sulfuric acid, oxalic acid, mixed acid solution (sulfuric acid and oxalic acid), tartaric acid and malonic acid as the electrolytes, respectively. Microstructures of thin films prepared by different oxidation conditions were analyzed by Scanning Electron Micrograph (SEM); dielectric properties were evaluated using high resistance meter and voltage resistance meter respectively. Experimental results show: (1) The aluminum oxide films are prepared by 100g/L tartaric acid, 100g/L malonic acid, 20g/L oxalic acid, respectively, those could be annealed in the 400˚C without cracks. (2) The above three aluminum oxide films have different anti-voltage resistance. 2000V is observed in 100g/L tartaric acid solution; 1700V is observed in 100g/L malonic acid solution; and 500 V is found in 20g/L oxalic acid. (3) Lots of acicular substance on surface of films under the oxidation condition of solution of 4% concentration, diameter of which is about 80nm, may be hydrates of Al(OH)3 absorbed on surface of films. (4) The inner aluminum oxide layer is structured by sulfuric acid, and the outer aluminum oxide layer is formed by tartaric acid, malonic acid and oxalic acid. Hence, the inner stress is presented in the annealing condition to lead cracks. Under the condition of malonic solution of 100g/L，the aluminum oxide film has anti-voltage resistance at 2000V and anti-thermal character in 400˚C.