| Summary: | 碩士 === 國立高雄應用科技大學 === 光電與通訊研究所 === 96 === The purpose of this thesis is to fabricate a thermal infrared microemitter on a <111>-oriented silicon wafer. We design various single heaters, such as micro-hotplates and microbridges, and heater arrays in this study. In our design, heavy N+ -doped single crystalline silicon and platinum thin films were chosen as heater material respectively.
In order to protect bonding pad during etching process, dual doped TMAH solutions with TMAH concentration of 2％ and 5％ were adopted and estimated at the temperature of 70℃, 80℃ and 90℃. We found that the 5％ dual doped TMAH accomplish the lowest etch rate of aluminum films and lower etching selectivity to {111}-oriented silicon at the etching temperature of 80℃. High etching selectivity to {111}-oriented silicon can be achieved by using 2％ dual doped TMAH at 80℃.
In this study, a platinum microemitter with the resistance of 24.7Ω was successfully completed. As the bias current was up to 31mA, we can find the device glowed.
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