The Preparation of Nanometer ITO Thin Film by Ion Beam Sputtering Method

• Main Authors: Tsai-Jung Yen, 顏采蓉
• Other Authors: Koho Yang
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/06561863320467211990

碩士 === 國立高雄應用科技大學 === 模具工程系碩士班 === 96 === Indium-tin-oxide（ITO）thin film is the most popular material for transparent electrical conduction film of industrial application. There are several applications based on its excellent properties such as good conductivity, high transmittance rate for visible light reflectance in the infrared range. In this study, the ITO thin films were obtained by ion beam sputtering method. ITO thin films deposited originally on NaCl（100）at RT with various deposition times（10-20 min）. Quasiamorphous films were obtained initially at the beginning of the deposition. With the increasing of deposition time to 15 min, the improvement of crystallinity was obviously. Many ITO grains of 20-30 nm in size were investigated by transmission electron microscope（TEM）. Due to parallel epitaxy with NaCl（100）when deposited for 15 and 20 min, these films showed strong（100）preferred orientation. In addition, ITO thin films were deposited on p-type Si（100）and glass（Corning 1737F） at RT for 180 min. The Grazing angle X-ray diffraction（XRD）was used to analyze the phases of deposited ITO films. The scanning electron microscope（SEM）and transmission electron microscope were applied to investigate the films morphologies and crystallographic orientation. Four-Point Probe and UV-visible spectrometer were used to measure the resistance and transmittance of the films. Details on the optical and electrical properties of the ITO film and structural changes that occurred were discussed.