| Summary: | 碩士 === 崑山科技大學 === 機械工程研究所 === 96 === To improve the efficiency of the solar cell device a microcrystalline silicon (µc-Si:H) thin film fabricated by the inductively coupled plasma chemical vapor deposition is studied. Several process parameters such as the hydrogen (H2) gas flows, the substrate temperatures and the radio frequencies (RF) power are selected to make µc-Si:H thin films and then investigate the effects of these parameters on the performance of µc-Si:H thin films. The structural, optical and electrical properties of µc-Si:H thin films are quantitatively measured by Raman spectrum, X-Ray, FTIR, Hall measuremnet, SEM and UV-visible etc.
From the results, it can be observed that the relative crystallinity, the crystal size, the mobility and the range of optical absorption spectrum of µc-Si:H thin films are increased as the increase of the substrate temperature and RF power. In this study, the optimum value of the crystal size observed by Scherrer equation can reach to 15nm. Moreover, the crystallinity factor of µc-Si:H films for each dilution ratio deposited at higher substrate temperature was about 80%. In addtition, the best value of mobility almost reach to 80 cm2/V-s. Nevertheless, results also reveal that changing the dilution ratio of hydrogen to silane won’t improve the performance of µc-Si:H thin films.
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