Study on the Au/Si/Pd ohmic contact to n-InP
碩士 === 崑山科技大學 === 電子工程研究所 === 96 === The electrical and micro-structural properties of the AuSiPd based ohmic contacts on n-InP were discussed in the research. A low specific contact resistance of 2.25?e10-6Ω-cm2 was obtained on Au/Si/Pd/n-InP contact after rapid thermal annealing (RTA) at 450 ?aC f...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/2g69xb |