Effects of Plasma Treatment on Flash Devices
碩士 === 逢甲大學 === 電子工程所 === 96 === In the TaN/SiO2/Si3N4/SiO2/Si structure, plasma treatment on charge storage layer Si3N4 film was used. It was found that the charge retention has been improved by N2 plasma treatment, but memory window was degraded. According to experimental results, the Si3N4 charge...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76513643352233622671 |