Effects of Plasma Treatment on Flash Devices

• Main Authors: Chiu-Fu Lin, 林久富
• Other Authors: Tsung-Kuei Kang
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/76513643352233622671

碩士 === 逢甲大學 === 電子工程所 === 96 === In the TaN/SiO2/Si3N4/SiO2/Si structure, plasma treatment on charge storage layer Si3N4 film was used. It was found that the charge retention has been improved by N2 plasma treatment, but memory window was degraded. According to experimental results, the Si3N4 charge storage layer by N2 plasma treatment reduced shallow and deeper trap at the same time. In the TaN/200Å HfO2/68Å Si3N4/98Å SiO2/Si structure, plasma treatment on blocking layer HfO2 film was used, it was found that charge retention have been improved by N2, H2 or NH3 plasma treatment. In the TaN/80Å HfO2/40 Å Si3N4/20Å SiO2/Si structure, experimental results indicate the charge retention was improved for 80Å HfO2 as blocking layer by N2 or H2 plasma treatment. Memory window was improved only by N2 plasma treatment. For the AES analysis, N2 or NH3 plasma treatment result in some N atoms pile up on HfO2 surface, it is supposed that N atoms can pass through HfO2 and then diffuses into Si3N4/SiO2 interface. N atoms diffusion into charge storage layer can improve charge retention. However, adequate N atoms can improve charge retention and memory window. It is believed that adequate N atoms can reduce shallow traps and increase deeper traps.