Investigations of Electrical Scanning Probe Microscopy on Front-end Processes of Si-based Devices

• Main Authors: Ping-jui Lu, 呂秉叡
• Other Authors: Feng-Tso Chien
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/57378014458538659293

碩士 === 逢甲大學 === 電子工程所 === 96 === In this work demonstrated the influence of post-spike furnace annealing (FA) on carrier profile and electrical junctions. Using front-wing conductive tips to perform nonphotoperturbed SCM, we have observed that post-spike FA at temperatures 450°C and 400°C can enhance boron activation in the shallower implanted region. The point defect recombination associated with boron activation may occur during the subsequent low temperature processes. The physical mechanism and the stability of carrier profiles will be discussed. Typical conductive atomic force microscopy (C-AFM) can observe the current image and reveal the current-leakage sites on dielectric film surface. However, the probed area might be damaged during the measurement. In this work, we have employed C-AFM to demonstrate a nondestructive, repeatable, and sensitive method that can be used to observe sub-breakdown behavior, to study the quality of dielectric films, as well as to perform repeatable observation and measurement. With C-AFM operated under the two-pass mode of scanning probe microscopy, we can observe the current images without photoperturbation problem. The current statistics carried out from the nonphotoperturbed C-AFM images show that one can observe significant change in current distribution before dielectric breakdown. Experimental results indicate that the measurement of C-AFM current statistics could be nondestructive, repeatable, and sensitive for the investigations of dielectric breakdown strength.