| Summary: | 碩士 === 清雲科技大學 === 電子工程系所 === 96 === The 850nm vertical cavity surface emitting laser (VCSEL) was investigated in this thesis. It is consisted of top and bottom DBR (Distributed Bragg Reflector) and multi-quantum wells (MQWs) micro-resonant-cavity. The output light is emitting from the lower DBR by the resonance effect in the micro-cavity. Comparison with edge emitting laser (ELD), VCSEL have the performances of circle and symmetrical light、low divergent angle 、good temperature characteristics 、low threshold current、easy process 、measurement and application on 2D array. These good performances make VCSEL very suitable for optical-fiber communications and some consumptive electronic products. In this thesis, different processes were employed to investigate the VCSEL characteristics. By comparison, different processes make different characteristics.The device L-I-V characteristic、temperature characteristics and the analysis of light mode were investigated. Three different processes were employed to investigate the VCSEL characteristic: (1) Vapor oxidation (2) Surface relief mixed Vapor oxidation (3) Vapor oxidation mixed Ion implantation. The experimental results show the vapor oxidation mixed ion implantation process obtained good device performances. The temperature characteristics is the increasing of operation current is lower than 1 mA when the device was burn-in at 90℃, and a light main mode with side mode suppression(SMSR) ratio of 19 dB was obtained.
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