Optical properties of gamma-In2Se3 epilayers and nanorods
碩士 === 中原大學 === 應用物理研究所 === 96 === We investigated energy relaxation of the hot electrons in γ-In2Se3 epilayers and nanorods. The room-temperature photoluminescence (PL) of theγ-In2Se3 epilayers and nanorods can be observed, indicating these materials can be used in the optolectronic devices. The el...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71476649414890776396 |
| Summary: | 碩士 === 中原大學 === 應用物理研究所 === 96 === We investigated energy relaxation of the hot electrons in γ-In2Se3 epilayers and nanorods. The room-temperature photoluminescence (PL) of theγ-In2Se3 epilayers and nanorods can be observed, indicating these materials can be used in the optolectronic devices. The electron temperatures of the hot electrons in γ-In2Se3 epilayers and nanorods were obtained from dependence of the excitation power and applied electric field on PL. A model based on the electron-LO-phonon scattering was used to analyze the electron temperature of hot electrons as a function of inγ-In2Se3 epilayers and nanorods. It was found the measured electron temperatures are in good agreement with the analysis from the above model, demonstrating the dominant scattering process in the energy relaxation is the electron-LO-phonon scattering. In addition, the 151-cm-1 peak observed in the Raman scattering can be related to the LO-phonon mode in γ-In2Se3. The LO-phonon lifetime of the γ-In2Se3epilayers can be obtained, which is higher than the theoretical value. This deviation is attributed to presence of the non-equilibrium hot-phonon effects.
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