Optical properties of InGaAsN/GaAs single quantum wells and InAs/GaAs quantum dot
碩士 === 中原大學 === 應用物理研究所 === 96 === Abstract We investigated optical properties of the InGaAsN/GaAs single quantum wells and the InAs/GaAs quantum dots incorporated with nanogold clusters by using photoluminescence (PL) and time-resolved photoluminescence(TRPL). Base on the temperature dependence of...
Main Authors: | Chia-Ya Chiang, 江佳諭 |
---|---|
Other Authors: | J. L. Shen |
Format: | Others |
Language: | zh-TW |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/14073912893290881627 |
Similar Items
-
Analytical transmission electron microscopy of InAs/GaAs quantum dots and GaInNAs/GaAs quantum wells
by: Kadkhodazadeh, Shima
Published: (2009) -
Photoluminescence and Phototreflectance characterization of InGaAsN/GaAs single quantum well
by: 楊岳霖
Published: (2002) -
Effect of composition fluctuation in InGaAsN/GaAs single quantum well
by: Pei-Chen Hsieh, et al.
Published: (2006) -
The Optical Properties of InAs/GaAs Quantum DOts
by: Fang-Chi Hsu, et al.
Published: (1999) -
Electro-Optical Properties of InAs/GaAs Quantum Dots
by: Jia-Ren Lee, et al.
Published: (2001)