Improvement of PECVD Chamber Clean Efficiency Using NF3-Based Remote Plasma

• Main Authors: Fu-Hsia Hsieh, 謝馥霞
• Other Authors: 魏大欽
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/74299655659612607399

碩士 === 中原大學 === 化學工程研究所 === 96 === Plasma-enhanced chemical vapor deposition of silicon-based film is typically used in applications such as isolation layers, dielectric layers or passivation of TFT and IC. In these CVD processes, amorphous silicon, silicon nitride and silicon oxide are deposited not only on substrate, but also on the chamber wall. The deposition on the chamber wall causes particle issue and thus affects film quality. Therefore, chamber cleaning process is indispensable. The objective of the thesis is to improve PECVD chamber clean efficiency. In this study, we reported the etching rate of silicon-based film (including amorphous silicon, nitride and oxide) etched by remote microwave plasma with CCP RF plasma, as a function of plasma power, spacing and gas flow ratio. Optical emission spectroscopy was used to detect the F atom intensity. It was found that the etching rate of silicon oxide was drastically improved by increasing of ion bombardment. It is also found that the addition of N2O to the NF3 plasma significantly improves the etching rate of amorphous silicon and silicon nitride.