| Summary: | 碩士 === 長庚大學 === 電機工程學研究所 === 96 === In this thesis we discuss K-Band voltage-controlled-Oscillator and realize by WINKIT GaAs 0.15um pHEMT technology. First we used the reflection architecture to design a VCO at 24GHz, then changed the negative bias voltage by field-plate element to improve the phase noise, and no extra power consumption. In order to solve the frequency float, here we used the body injection-locked technology to lock the frequency range, and after injection, the phase noise was improve. Then we design a SPST architecture microwave switch from 100MHz to 2GHz. At last we used lump element to design a tunable active inductor and operate at high frequency.
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