| Summary: | 碩士 === 國立中正大學 === 光機電整合工程所 === 96 === The inorganic thermoelectric thin films were fabricated by high vacuum evaporator system on transparent and conductive ITO substrates . In addition, post-annealing of the films was performed using a rapid thermal processing system. Finally, we discussed with the thermoelectric properties. In this investigation, we used P-type Sb、Te and N-Type Bi、Te those four kinds of thermoelectric materials. Then, we change the different evaporation rate and keep film thickness were 5000Å.
In this study, we discussed with the effect of thermoelectric properties of the inorganic thermoelectric thin films P-Type Sb2Te3 and N-Type Bi2Te3 after three kinds of rapid thermal processing system temperature. Evidence showed that when evaporation rate were(Bi：Te)( 1 ： 1.5), the element rate were approach P-Type Sb2Te3 and N-Type Bi2Te3 thin films and the thermoelectric properties were the best. Finally, we demonstrated that after rapid thermal processing system can make the thermoelectric thin films has more crystals. Therefore, Seebeck coefficient and power factor were also increased.
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