A study of flash-memory-based embedded storage systems

碩士 === 國立中正大學 === 資訊工程所 === 96 === Since flash memory is more energy efficient and shock resistant, it has become an alternative for secondary storage especially for embedded devices. After a data page in a flash memory is written, it cannot be overwritten unless the data page is erased. For perform...

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Bibliographic Details
Main Authors: Zheng-Gang Lin, 林正剛
Other Authors: Shi-Wu Lo
Format: Others
Language:zh-TW
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/13933829791718323450
Description
Summary:碩士 === 國立中正大學 === 資訊工程所 === 96 === Since flash memory is more energy efficient and shock resistant, it has become an alternative for secondary storage especially for embedded devices. After a data page in a flash memory is written, it cannot be overwritten unless the data page is erased. For performance and data secure consideration, users usually use out-place updates. In most flash devices produced today, a flash translation layer (FTL) is adopted to emulate a flash memory as a traditional hard disk. And an operating system can access the flash devices as normal block devices. However, because these block device drivers are highly optimized for mechanical disks, it cannot fully exploit the benefits of flash memory. In my thesis, two algorithms are proposed. The first one is a flash endurance algorithm which can extend the life time of flash memories. The second one is a new hibernation method. Because the time of random-access and sequential-access are almost the same, an operating system can load the core image first and load other pages on demand to speed up the process of hibernating and awakening.