Characteristic analyze of thermal resistance and avalanche breakdown in InP-based HBT
碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 95 === Heterojunction bipolar transistors (HBTs) have the advantage of low turn-on voltage, high cutoff frequency and high power density because of their superior material characteristics and structures. There are several material systems based on different substrat...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04353264190973215428 |