Preparation of Highly C-axis Oriented PZT Films on Si Substrate by Sol-Gel Method with MgO Buffer Layer and Their Surface Acoustic Wave Applications

• Main Authors: Zhi-Zhung Yen, 顏志中
• Other Authors: Wen-Ching Shih
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/21974509418788824664

碩士 === 大同大學 === 光電工程研究所 === 95 === Lead zirconate titanate (Pb(Zr,Ti)O3, PZT) thin films have received much attention due to their excellent dielectric, ferroelectric and piezoelectric properties. Epitaxial growth of PZT films on Si substrate is desirable to integrate ferroelectric devices and semiconductor devices on the same substrate. However, epitaxy of PZT films directly on Si substrates is very difficult because of the lattice mismatch between them and the interdiffusion owing to the high growth temperature during deposition. In this research, we study the effect of MgO buffer layer and the post-annealing conditions on the C-axis orientation of the PZT films fabricated by the sol-gel method on Si substrate. The experimental results show that if we anneal the PZT films grown on MgO (200)/Si substrate at 600 °C for 1 hour, highly C-axis oriented PZT films could be obtained. The full width at half maximum intensity (FWHM) of PZT (001) and PZT (002) peaks obtained from the X-ray diffraction (XRD) were 0.18 ° and 0.22 °, respectively. The surface roughness of the annealed PZT films was about 3.9 nm. Preparing two kinds of the structure, We try to fabricate the interdigital transducer (IDT) on PZT films and measure the frequency response by network analyzer. The results could be useful in the integration of ferroelectric devices and semiconductor devices on the same Si substrate.