| Summary: | 碩士 === 淡江大學 === 物理學系碩士班 === 95 === This thesis is devoted to study the properties of Ⅱ-Ⅵ semiconductor Nano structure. We attempt to develop different nano structures based on GaAs substrate with CdSe/CdSSe/ZnSe, including: quantum ring, nano hole, quantum wire, different size quantum dot on the same substrate , and various ways to grow quantum dot. First we rinse the substrate in order to cause flutes and fillisters, grow quantum ring and quantum wire based on the properties of surrounding and assembling of quantum dot and then try to grow them with different materials and ways. For example, we grow quantum ring with its quality of covering, study its properties of growing ; find out the nano hole, and study the relationships between depth and width of nano hole and the ways of growing and heat treatment and then find out the causes of nano hole growing and then control its size and finally grow nano hole with different materials and ways. Furthermore, we attempt to grow quantum sticks with extremely tiny sizes based from substrates with different ways of heat treatment in order to understand its physical properties and causes. At the same time, we attempt to grow quantum dot with better qualities, with gradation models, and then control the height, density and the rate of height and width.
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