A study of the relationship between diamond film synthesis and electric field of MPCVD using simulation approach

• Main Authors: Yen-Ting Chen, 陳彥廷
• Other Authors: 林啟瑞
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/pam83q

碩士 === 國立臺北科技大學 === 製造科技研究所 === 95 === This research is based on microwave plasma CVD deposition to adjust different resonance cavities by using tuner. In order to find the opposable position between substrate and the center of plasma, we fixed the power at 800 Watt and the working pressure at 45 Torr. Also, the density ration between CH4 and H2 is 0.25% to grow diamond film on Si(100). Growing mechanism is first to lead-in high normality of CH4 and H2 mixing gas 1% to process nucleation for 10 minutes. Then using the mixing gas of CH4 and H2 which has the normality ratio of 0.25% to grow diamond film for 2-3 hours. Using Z-axis tuner to change the result of resonance position is to produce two resonances positions which enables to separate one huge plasma ball into two smaller ones. This result is able to increase the deposition area; however, the deposition time is increasingly to 5-6 hour from the very beginning which is about 2-3 hours. Based on the simulation result, changing the working distance doesn’t effect the electric field intensity. As the changing of working distance, the surface electric field intensity is increasing little by little. Meanwhile, as the working distance moving downwards, the quality of diamond is getting worse. This means when the electric intensity is getting lager, the quality of diamond film will decrease.