GaN blue light-emitting diodes with ZnO nucleation layers prepared by the sol-gel method
碩士 === 國立臺北科技大學 === 光電工程系研究所 === 95 === GaN blue light-emitting diodes (LEDs) on sapphire substrate with a ZnO nucleation layer that was deposited by the sol-gel method were fabricated. Typical current-voltage (I-V) characteristics of the GaN blue LEDs with a ZnO nucleation layer have a forward-bias...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5yd9am |
| Summary: | 碩士 === 國立臺北科技大學 === 光電工程系研究所 === 95 === GaN blue light-emitting diodes (LEDs) on sapphire substrate with a ZnO nucleation layer that was deposited by the sol-gel method were fabricated. Typical current-voltage (I-V) characteristics of the GaN blue LEDs with a ZnO nucleation layer have a forward-bias voltage of 3.25 V at an injection current of 20 mA, and reverse currents of 4.53×10-9 and 6.32×10-8 A at reverse biases of 10 and 20 V, respectively. The InGaN blue LEDs have an ideality factor n of 1.27 at a forward bias of 1.8 V. The external quantum efficiency at an injection current of 20 mA was measured to be 12.82 %. The light output power reached as high as 23.2 mW at a forward current of 100 mA.
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